Progress in Compound Semiconductor Materials IV: Volume 829: Electronic and Optoelectronic Applications (MRS Proceedings)

Central to bandgap engineering, or more precisely, ¿wave-function engineering,¿ is the concept that, by spatially varying the composition and doping of semiconductors over distances ranging from a few micrometers down to one monolayer, one can tailor the electronic band structure in a nearly arbitrary and continuous way using epitaxial growth techniques. The objective of this volume is to review the progress on interband and intersubband transitions in semiconductors including III-V, IV and II-VI materials and quantum structures, as well as to cover the progress on light sources, detectors, modulators and electronic materials and devices. Brought to maturity, such devices will likely see widespread use in applications as diverse as infrared imaging, chemical and biological sensing, surveillance, short-links, space-based applications, high-bandwidth communications, and more. In keeping with tradition, this newest volume in the series on compound semiconductor materials brings together an outstanding group of internationally recognized researchers to report on their most recent results and newly gained insights and to provide an up-to-date snapshot of optoelectronics and related fields in 2004/2005. The volume covers a wide range of topics spanning opto- and microelectronic materials, growth and synthesis, devices, experimental techniques, modeling tools, and applications. Wavelength ranges span from the UV to the THz, and into the GHz modulation range.Brown, Gail J. is the author of 'Progress in Compound Semiconductor Materials IV: Volume 829: Electronic and Optoelectronic Applications (MRS Proceedings)', published 2005 under ISBN 9781558997776 and ISBN 1558997776.