Luminescence Studies of Ion-Implanted Gallium Nitride and Aluminum Gallium Nitride

Recently, research on the wide bandgap semiconductors such as GaN and Al(x)Ga(1-x)N became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted Al(x)Ga(1-x)N, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature.Air Force Inst of Tech Wright-Patterson AFB OH School of Engineering and Management/dept of Engineering Physics is the author of 'Luminescence Studies of Ion-Implanted Gallium Nitride and Aluminum Gallium Nitride', published 2003 under ISBN 9781423548287 and ISBN 1423548280.