Integration of Advanced Micro- and Nanoelectronic Devices--Critical Issues and Solutions : 2004 MRS Spring Meeting Symposium Proceedings

This volume contains the joint proceedings of Symposium D, High-k Insulators and Ferroelectrics for Advanced Microelectronic Devices, and Symposium E, Integration Challenges in Next-Generation Oxide-Based Nanoelectronics, held during the 2004 MRS Spring Meeting in San Francisco. Symposium D focuses on the deposition and characterization of new high-k gate dielectrics and ferroelectrics required to facilitate improvements and allow further scaling of CMOS transistor, memory cell and other advanced microelectronic device technologies. Symposium E addresses materials science and engineering issues related to oxide device fabrication-deposition, patterning, interconnection, metallization, and large-scale integration to achieve high levels of device integration and multifunctionality on a chip. Of prime concern are the difficulties and means to grow epitaxial oxide films on technologically important substrates such as Si and GaAs. Topics include: atomic-layer deposition of high-k dielectrics; electrical characterization and reliability of high-k oxynitrides; high-k and ferroelectric layers; metal gates; high-k and high-mobility substrates; theory-physical, chemical and electrical characterization; silicates and nitrogen incorporation into high-k layers; ferroelectrics; MBE, PLD and MOCVD of high-k; ferroelectrics-physical, chemical and electrical characterization; gate dielectrics; complex oxide heterostructures; magnetic oxide nanostructures; and functional nanostructures.Morais, J. is the author of 'Integration of Advanced Micro- and Nanoelectronic Devices--Critical Issues and Solutions : 2004 MRS Spring Meeting Symposium Proceedings', published 2009 under ISBN 9781558997615 and ISBN 155899761X.