Gallium Nitride (Gan) II Semiconductors and Semimentals

These two volumes give a comprehensive description of both experimental and theoretical developments in the field of III-V nitrides over the past thirty years.The various chapters address issues related to crystal growth and structure,doping and alloy phenomena,band structure,optical and electronic properties,non-linear optical phenomena,the origin and the effect of strain in the hetero-epitaxy and the electronic structure,phonons,the theory and experimental observations of the effect of hydrogen,investigation of the electronic structure of defects using transport and magnetic resonance measurements,MQWs and superlattices,device processing and applications of these materials to LEDs,Lasers,Ultraviolet and X-ray Detectors,Transistors and non-volatile semiconductor memories. The various chapters were written by seasoned experts and an attempt has been made to address the topics in a tutorial fashion,including an historical review,a description of the state of the art,anticipation of future developments and presentation of a complete list of references.The level of treatment of the various topics is appropriate for graduate students,laboratory practitioners as well as experts in the field.Pankove, Jacques I. is the author of 'Gallium Nitride (Gan) II Semiconductors and Semimentals' with ISBN 9780125440554 and ISBN 0125440553.